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Semikron DanfossMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Single
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 154,23
€ 154,23 komadno (bez PDV-a)
€ 192,79
€ 192,79 komadno (s PDV-om)
1
€ 154,23
€ 154,23 komadno (bez PDV-a)
€ 192,79
€ 192,79 komadno (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
1
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena |
|---|---|
| 1 - 9 | € 154,23 |
| 10 - 19 | € 116,23 |
| 20+ | € 115,11 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Semikron DanfossMaximum Continuous Collector Current
232 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Single
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
94 x 34 x 30.1mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


