Semikron Danfoss SKM50GB12T4 Dual Half Bridge IGBT Module, 81 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

Tehnička dokumentacija
Tehnički podaci
Proizvođač
Semikron DanfossMaximum Continuous Collector Current
81 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 125,37
€ 125,37 komadno (bez PDV-a)
€ 156,71
€ 156,71 komadno (s PDV-om)
1
€ 125,37
€ 125,37 komadno (bez PDV-a)
€ 156,71
€ 156,71 komadno (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
1
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena |
|---|---|
| 1 - 1 | € 125,37 |
| 2 - 4 | € 120,80 |
| 5 - 9 | € 116,62 |
| 10 - 19 | € 115,28 |
| 20+ | € 113,75 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Semikron DanfossMaximum Continuous Collector Current
81 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS2
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

