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SemikronMaximum Continuous Collector Current
115 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Dual Half Bridge
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 123,87
komadno (bez PDV-a)
€ 154,84
komadno (s PDV-om)
1
€ 123,87
komadno (bez PDV-a)
€ 154,84
komadno (s PDV-om)
1
Kupujte na veliko
količina | jedinična cijena |
---|---|
1 - 1 | € 123,87 |
2 - 4 | € 119,22 |
5 - 9 | € 117,58 |
10 - 19 | € 109,00 |
20+ | € 104,19 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
SemikronMaximum Continuous Collector Current
115 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Dual Half Bridge
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Detalji o proizvodu
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.