Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-65 °C
Detalji o proizvodu
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
RSD 1.339
RSD 267,802 komadno (u pakovanju od 5) (bez PDV-a)
RSD 1.607
RSD 321,362 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 1.339
RSD 267,802 komadno (u pakovanju od 5) (bez PDV-a)
RSD 1.607
RSD 321,362 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 267,802 | RSD 1.339 |
25 - 45 | RSD 258,657 | RSD 1.293 |
50 - 120 | RSD 242,981 | RSD 1.215 |
125 - 245 | RSD 227,305 | RSD 1.137 |
250+ | RSD 223,386 | RSD 1.117 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-65 °C
Detalji o proizvodu