Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
150W
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 80,00
€ 3,20 Each (Supplied on a Reel) (bez PDV-a)
€ 100,00
€ 4,00 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
25
€ 80,00
€ 3,20 Each (Supplied on a Reel) (bez PDV-a)
€ 100,00
€ 4,00 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
25
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 25 - 45 | € 3,20 | € 16,00 |
| 50 - 120 | € 3,00 | € 15,00 |
| 125 - 245 | € 2,80 | € 14,00 |
| 250+ | € 2,75 | € 13,75 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
150W
Maximum Operating Temperature
175°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


