STMicroelectronics MDmesh M5 N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STB38N65M5
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
710 V
Package Type
D2PAK (TO-263)
Series
MDmesh M5
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Width
9.35mm
Height
4.6mm
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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€ 6.610,00
€ 6,61 Each (On a Reel of 1000) (bez PDV-a)
€ 8.262,50
€ 8,262 Each (On a Reel of 1000) (s PDV-om)
1000
€ 6.610,00
€ 6,61 Each (On a Reel of 1000) (bez PDV-a)
€ 8.262,50
€ 8,262 Each (On a Reel of 1000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
1000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
710 V
Package Type
D2PAK (TO-263)
Series
MDmesh M5
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Width
9.35mm
Height
4.6mm
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda