Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET II
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
100 nC @ 5 V
Width
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 8,98
€ 4,49 komadno (u pakiranju od 2) (bez PDV-a)
€ 11,22
€ 5,612 komadno (u pakiranju od 2) (s PDV-om)
Standard
2
€ 8,98
€ 4,49 komadno (u pakiranju od 2) (bez PDV-a)
€ 11,22
€ 5,612 komadno (u pakiranju od 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 2 - 2 | € 4,49 | € 8,98 |
| 4+ | € 4,33 | € 8,66 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET II
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
100 nC @ 5 V
Width
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Height
4.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


