Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
7.45mm
Length
6.6mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
2.38mm
Forward Diode Voltage
1.1V
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 1.875,00
€ 0,75 Each (On a Reel of 2500) (bez PDV-a)
€ 2.343,75
€ 0,938 Each (On a Reel of 2500) (s PDV-om)
2500
€ 1.875,00
€ 0,75 Each (On a Reel of 2500) (bez PDV-a)
€ 2.343,75
€ 0,938 Each (On a Reel of 2500) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
2500
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
7.45mm
Length
6.6mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
2.38mm
Forward Diode Voltage
1.1V
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


