Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
250 V
Series
STripFET II
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
29.5 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
2.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 11,20
€ 2,24 komadno (u pakiranju od 5) (bez PDV-a)
€ 14,00
€ 2,80 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 11,20
€ 2,24 komadno (u pakiranju od 5) (bez PDV-a)
€ 14,00
€ 2,80 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 20 | € 2,24 | € 11,20 |
| 25 - 45 | € 2,16 | € 10,80 |
| 50 - 120 | € 2,02 | € 10,10 |
| 125 - 245 | € 1,89 | € 9,45 |
| 250+ | € 1,87 | € 9,35 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
250 V
Series
STripFET II
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
29.5 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
2.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


