Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 9,55
€ 1,91 komadno (u pakiranju od 5) (bez PDV-a)
€ 11,94
€ 2,388 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 9,55
€ 1,91 komadno (u pakiranju od 5) (bez PDV-a)
€ 11,94
€ 2,388 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 20 | € 1,91 | € 9,55 |
| 25 - 45 | € 1,84 | € 9,20 |
| 50 - 120 | € 1,72 | € 8,60 |
| 125 - 245 | € 1,61 | € 8,05 |
| 250+ | € 1,60 | € 8,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


