Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.4mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
€ 17,50
€ 3,50 Each (Supplied on a Reel) (bez PDV-a)
€ 21,88
€ 4,375 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
5
€ 17,50
€ 3,50 Each (Supplied on a Reel) (bez PDV-a)
€ 21,88
€ 4,375 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
5
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.4mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


