Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Height
2.4mm
Detalji o proizvodu
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 13,00
€ 1,30 komadno (u pakiranju od 10) (bez PDV-a)
€ 16,25
€ 1,625 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 13,00
€ 1,30 komadno (u pakiranju od 10) (bez PDV-a)
€ 16,25
€ 1,625 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 10 | € 1,30 | € 13,00 |
| 20+ | € 1,25 | € 12,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Height
2.4mm
Detalji o proizvodu
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


