Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 14,50
€ 2,90 komadno (u pakiranju od 5) (bez PDV-a)
€ 18,12
€ 3,625 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 14,50
€ 2,90 komadno (u pakiranju od 5) (bez PDV-a)
€ 18,12
€ 3,625 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 5 | € 2,90 | € 14,50 |
| 10 - 95 | € 2,52 | € 12,60 |
| 100 - 495 | € 1,96 | € 9,80 |
| 500 - 995 | € 1,72 | € 8,60 |
| 1000+ | € 1,44 | € 7,20 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


