Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-252
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 12,00
€ 1,20 komadno (u pakiranju od 10) (bez PDV-a)
€ 15,00
€ 1,50 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 12,00
€ 1,20 komadno (u pakiranju od 10) (bez PDV-a)
€ 15,00
€ 1,50 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 40 | € 1,20 | € 12,00 |
| 50 - 90 | € 1,15 | € 11,50 |
| 100+ | € 1,09 | € 10,90 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-252
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


