Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
500 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
310 nC @ 10 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 51,06
€ 51,06 komadno (bez PDV-a)
€ 63,82
€ 63,82 komadno (s PDV-om)
1
€ 51,06
€ 51,06 komadno (bez PDV-a)
€ 63,82
€ 63,82 komadno (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
1
| količina | jedinična cijena |
|---|---|
| 1 - 9 | € 51,06 |
| 10 - 49 | € 47,80 |
| 50 - 99 | € 47,54 |
| 100 - 199 | € 43,62 |
| 200+ | € 42,31 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
500 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
310 nC @ 10 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Detalji o proizvodu


