STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 2,85
Each (Supplied as a Tape) (bez PDV-a)
€ 3,562
Each (Supplied as a Tape) (s PDV-om)
5
€ 2,85
Each (Supplied as a Tape) (bez PDV-a)
€ 3,562
Each (Supplied as a Tape) (s PDV-om)
5
Kupujte na veliko
| količina | jedinična cijena | Po traka |
|---|---|---|
| 5 - 20 | € 2,85 | € 14,25 |
| 25 - 45 | € 2,75 | € 13,75 |
| 50 - 120 | € 2,55 | € 12,75 |
| 125 - 245 | € 2,40 | € 12,00 |
| 250+ | € 2,35 | € 11,75 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda