STMicroelectronics STGP3HF60HD, Type N-Channel IGBT, 7.5 A 600 V, 3-Pin TO-220, Through Hole
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
38W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 39,50
€ 0,79 komadno (u cijevi od 50) (bez PDV-a)
€ 49,38
€ 0,988 komadno (u cijevi od 50) (s PDV-om)
50
€ 39,50
€ 0,79 komadno (u cijevi od 50) (bez PDV-a)
€ 49,38
€ 0,988 komadno (u cijevi od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
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- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
38W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda