STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO, Through Hole
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STMicroelectronicsMaximum Continuous Collector Current
30 A @ +25°C
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
115 W
Package Type
TO
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
553mJ
Minimum Operating Temperature
-55 °C
Gate Capacitance
1952pF
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P.O.A.
30
P.O.A.
30
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Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current
30 A @ +25°C
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
115 W
Package Type
TO
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Energy Rating
553mJ
Minimum Operating Temperature
-55 °C
Gate Capacitance
1952pF
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products