STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
469 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Korea, Republic Of
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 200,70
€ 6,69 komadno (u cijevi od 30) (bez PDV-a)
€ 250,88
€ 8,362 komadno (u cijevi od 30) (s PDV-om)
30
€ 200,70
€ 6,69 komadno (u cijevi od 30) (bez PDV-a)
€ 250,88
€ 8,362 komadno (u cijevi od 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 30 - 30 | € 6,69 | € 200,70 |
| 60+ | € 5,77 | € 173,10 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
469 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Korea, Republic Of
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda