STMicroelectronics STGWT80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Series
HB
Standards/Approvals
RoHS
Automotive Standard
No
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 35,75
€ 7,15 Each (Supplied in a Tube) (bez PDV-a)
€ 44,69
€ 8,94 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakiranje (cijev)
5
€ 35,75
€ 7,15 Each (Supplied in a Tube) (bez PDV-a)
€ 44,69
€ 8,94 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (cijev)
5
| količina | jedinična cijena |
|---|---|
| 5 - 9 | € 7,15 |
| 10 - 24 | € 6,70 |
| 25 - 49 | € 6,30 |
| 50+ | € 6,20 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Series
HB
Standards/Approvals
RoHS
Automotive Standard
No
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda