N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STMicroelectronics STL140N4F7AG

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

40 V

Package Type

PowerFLAT

Series

STripFET F7

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

111 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

5.4mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STMicroelectronics STL140N4F7AG

P.O.A.

N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT STMicroelectronics STL140N4F7AG
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

40 V

Package Type

PowerFLAT

Series

STripFET F7

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

111 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

5.4mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više