Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
5.2 mm
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 6.210,00
€ 2,07 Each (On a Reel of 3000) (bez PDV-a)
€ 7.762,50
€ 2,588 Each (On a Reel of 3000) (s PDV-om)
3000
€ 6.210,00
€ 2,07 Each (On a Reel of 3000) (bez PDV-a)
€ 7.762,50
€ 2,588 Each (On a Reel of 3000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
3000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
5.2 mm
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


