P-Channel MOSFET, 42 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL42P6LLF6
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Height
0.95mm
Series
STripFET
Forward Diode Voltage
1.1V
Detalji o proizvodu
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
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€ 1,61
Each (On a Reel of 3000) (bez PDV-a)
€ 2,012
Each (On a Reel of 3000) (s PDV-om)
3000
€ 1,61
Each (On a Reel of 3000) (bez PDV-a)
€ 2,012
Each (On a Reel of 3000) (s PDV-om)
3000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Height
0.95mm
Series
STripFET
Forward Diode Voltage
1.1V
Detalji o proizvodu
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda