Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET F3
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Forward Voltage Vf
1.3V
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Maximum Operating Temperature
175°C
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Height
0.95mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 16,80
€ 1,68 komadno (u pakiranju od 10) (bez PDV-a)
€ 21,00
€ 2,10 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 16,80
€ 1,68 komadno (u pakiranju od 10) (bez PDV-a)
€ 21,00
€ 2,10 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 20 | € 1,68 | € 16,80 |
| 30 - 90 | € 1,65 | € 16,50 |
| 100 - 490 | € 1,36 | € 13,60 |
| 500+ | € 1,13 | € 11,30 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET F3
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Forward Voltage Vf
1.3V
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Maximum Operating Temperature
175°C
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Height
0.95mm
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


