N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL90N6F7
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
6.35mm
Forward Diode Voltage
1.2V
Height
0.95mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 20,80
€ 2,08 Each (In a Pack of 10) (bez PDV-a)
€ 24,34
€ 2,434 Each (In a Pack of 10) (s PDV-om)
Standard
10
€ 20,80
€ 2,08 Each (In a Pack of 10) (bez PDV-a)
€ 24,34
€ 2,434 Each (In a Pack of 10) (s PDV-om)
Standard
10
Kupujte na veliko
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 10 - 40 | € 2,08 | € 20,80 |
| 50 - 90 | € 2,01 | € 20,10 |
| 100 - 240 | € 1,89 | € 18,90 |
| 250 - 490 | € 1,76 | € 17,60 |
| 500+ | € 1,74 | € 17,40 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
6.35mm
Forward Diode Voltage
1.2V
Height
0.95mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda