Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 4.410,00
€ 1,47 Each (On a Reel of 3000) (bez PDV-a)
€ 5.512,50
€ 1,838 Each (On a Reel of 3000) (s PDV-om)
3000
€ 4.410,00
€ 1,47 Each (On a Reel of 3000) (bez PDV-a)
€ 5.512,50
€ 1,838 Each (On a Reel of 3000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
3000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


