STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 400 mA, 600 V Enhancement, 4-Pin SOT-223 STN1HNK60

Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
400mA
Maximum Drain Source Voltage Vds
600V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
8.5Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
3.3W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
7nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
3.5 mm
Height
1.8mm
Length
6.5mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 9,80
€ 0,98 komadno (u pakiranju od 10) (bez PDV-a)
€ 12,25
€ 1,225 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 9,80
€ 0,98 komadno (u pakiranju od 10) (bez PDV-a)
€ 12,25
€ 1,225 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 10 | € 0,98 | € 9,80 |
| 20+ | € 0,95 | € 9,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
400mA
Maximum Drain Source Voltage Vds
600V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
8.5Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
3.3W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
7nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
3.5 mm
Height
1.8mm
Length
6.5mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu

