Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
160W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13.6nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 92,00
€ 1,84 komadno (u cijevi od 50) (bez PDV-a)
€ 115,00
€ 2,30 komadno (u cijevi od 50) (s PDV-om)
50
€ 92,00
€ 1,84 komadno (u cijevi od 50) (bez PDV-a)
€ 115,00
€ 2,30 komadno (u cijevi od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
160W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13.6nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Automotive Standard
No
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


