Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
80V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.3mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
200W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
96nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 15,70
€ 3,14 komadno (u pakiranju od 5) (bez PDV-a)
€ 19,62
€ 3,925 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 15,70
€ 3,14 komadno (u pakiranju od 5) (bez PDV-a)
€ 19,62
€ 3,925 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 5 | € 3,14 | € 15,70 |
| 10+ | € 3,02 | € 15,10 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
80V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.3mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
200W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
96nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


