Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
38A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
28mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
80W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
32nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 46,00
€ 0,92 komadno (u cijevi od 50) (bez PDV-a)
€ 57,50
€ 1,15 komadno (u cijevi od 50) (s PDV-om)
50
€ 46,00
€ 0,92 komadno (u cijevi od 50) (bez PDV-a)
€ 57,50
€ 1,15 komadno (u cijevi od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 50 - 50 | € 0,92 | € 46,00 |
| 100 - 450 | € 0,70 | € 35,00 |
| 500 - 950 | € 0,61 | € 30,50 |
| 1000 - 4950 | € 0,51 | € 25,50 |
| 5000+ | € 0,49 | € 24,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
38A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
28mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
80W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
32nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


