Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
9.15mm
Width
4.6 mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 75,00
€ 1,50 komadno (u cijevi od 50) (bez PDV-a)
€ 93,75
€ 1,875 komadno (u cijevi od 50) (s PDV-om)
50
€ 75,00
€ 1,50 komadno (u cijevi od 50) (bez PDV-a)
€ 93,75
€ 1,875 komadno (u cijevi od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 50 - 50 | € 1,50 | € 75,00 |
| 100 - 450 | € 1,23 | € 61,50 |
| 500 - 950 | € 1,08 | € 54,00 |
| 1000 - 4950 | € 1,01 | € 50,50 |
| 5000+ | € 0,86 | € 43,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Height
9.15mm
Width
4.6 mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


