Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
23mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
104nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
15.75mm
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 17,00
€ 3,40 komadno (u pakiranju od 5) (bez PDV-a)
€ 21,25
€ 4,25 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 17,00
€ 3,40 komadno (u pakiranju od 5) (bez PDV-a)
€ 21,25
€ 4,25 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 5 | € 3,40 | € 17,00 |
| 10+ | € 3,28 | € 16,40 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
23mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
104nC
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
15.75mm
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


