Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 89,50
€ 1,79 komadno (u cijevi od 50) (bez PDV-a)
€ 111,88
€ 2,238 komadno (u cijevi od 50) (s PDV-om)
50
€ 89,50
€ 1,79 komadno (u cijevi od 50) (bez PDV-a)
€ 111,88
€ 2,238 komadno (u cijevi od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 50 - 50 | € 1,79 | € 89,50 |
| 100+ | € 1,72 | € 86,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


