Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
4 mm
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 8,60
€ 0,86 komadno (u pakiranju od 10) (bez PDV-a)
€ 10,75
€ 1,075 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 8,60
€ 0,86 komadno (u pakiranju od 10) (bez PDV-a)
€ 10,75
€ 1,075 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 10 | € 0,86 | € 8,60 |
| 20+ | € 0,83 | € 8,30 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
60V
Package Type
SOIC
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
17nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Width
4 mm
Height
1.65mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


