Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.15mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
43.6 nC @ 10 V
Transistor Material
Si
Height
20.15mm
Minimum Operating Temperature
-65 °C
Detalji o proizvodu
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 106,20
€ 3,54 komadno (u cijevi od 30) (bez PDV-a)
€ 132,75
€ 4,425 komadno (u cijevi od 30) (s PDV-om)
30
€ 106,20
€ 3,54 komadno (u cijevi od 30) (bez PDV-a)
€ 132,75
€ 4,425 komadno (u cijevi od 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 30 - 60 | € 3,54 | € 106,20 |
| 90 - 480 | € 2,87 | € 86,10 |
| 510 - 960 | € 2,66 | € 79,80 |
| 990+ | € 2,47 | € 74,10 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.15mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
43.6 nC @ 10 V
Transistor Material
Si
Height
20.15mm
Minimum Operating Temperature
-65 °C
Detalji o proizvodu


