Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10.5A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
750mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
87nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 91,80
€ 3,06 komadno (u cijevi od 30) (bez PDV-a)
€ 114,75
€ 3,825 komadno (u cijevi od 30) (s PDV-om)
30
€ 91,80
€ 3,06 komadno (u cijevi od 30) (bez PDV-a)
€ 114,75
€ 3,825 komadno (u cijevi od 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 30 - 60 | € 3,06 | € 91,80 |
| 90 - 480 | € 2,48 | € 74,40 |
| 510 - 960 | € 2,30 | € 69,00 |
| 990+ | € 2,02 | € 60,60 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10.5A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
750mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
87nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Detalji o proizvodu


