Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Detalji o proizvodu
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
€ 145,20
€ 4,84 komadno (u cijevi od 30) (bez PDV-a)
€ 181,50
€ 6,05 komadno (u cijevi od 30) (s PDV-om)
30
€ 145,20
€ 4,84 komadno (u cijevi od 30) (bez PDV-a)
€ 181,50
€ 6,05 komadno (u cijevi od 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 30 - 60 | € 4,84 | € 145,20 |
| 90 - 480 | € 3,93 | € 117,90 |
| 510 - 960 | € 3,64 | € 109,20 |
| 990+ | € 3,21 | € 96,30 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
15.75mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Height
20.15mm
Detalji o proizvodu


