Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.15mm
Detalji o proizvodu
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 204,90
€ 6,83 komadno (u cijevi od 30) (bez PDV-a)
€ 256,12
€ 8,538 komadno (u cijevi od 30) (s PDV-om)
30
€ 204,90
€ 6,83 komadno (u cijevi od 30) (bez PDV-a)
€ 256,12
€ 8,538 komadno (u cijevi od 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 30 - 60 | € 6,83 | € 204,90 |
| 90 - 480 | € 5,74 | € 172,20 |
| 510 - 960 | € 5,29 | € 158,70 |
| 990+ | € 4,78 | € 143,40 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.15mm
Detalji o proizvodu


