N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
20.15mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
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Provjerite ponovno kasnije.
€ 9,45
Each (Supplied in a Tube) (bez PDV-a)
€ 11,812
Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakiranje (cijev)
2
€ 9,45
Each (Supplied in a Tube) (bez PDV-a)
€ 11,812
Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakiranje (cijev)
2
Kupujte na veliko
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 2 - 8 | € 9,45 | € 18,90 |
| 10 - 18 | € 9,10 | € 18,20 |
| 20 - 48 | € 8,55 | € 17,10 |
| 50 - 98 | € 8,00 | € 16,00 |
| 100+ | € 7,90 | € 15,80 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
20.15mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda