N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK Taiwan Semi TSM060N03CP ROG

RS kataloški broj:: 171-3607robna marka: Taiwan SemiconductorProizvođački broj:: TSM060N03CP ROG
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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Width

5.8mm

Typical Gate Charge @ Vgs

11.1 nC @ 4.5 V

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1V

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€ 0,46

Each (On a Reel of 2500) (bez PDV-a)

€ 0,575

Each (On a Reel of 2500) (s PDV-om)

N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK Taiwan Semi TSM060N03CP ROG

€ 0,46

Each (On a Reel of 2500) (bez PDV-a)

€ 0,575

Each (On a Reel of 2500) (s PDV-om)

N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK Taiwan Semi TSM060N03CP ROG
Informacije o stanju skladišta trenutno nisu dostupne.

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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Width

5.8mm

Typical Gate Charge @ Vgs

11.1 nC @ 4.5 V

Number of Elements per Chip

1

Height

2.3mm

Forward Diode Voltage

1V