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Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
60 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
19 nC @ 4.5 V, 37 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
4.85mm
Width
3.9mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.55mm
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Tehnička dokumentacija
Tehnički podaci
Proizvođač
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
60 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
19 nC @ 4.5 V, 37 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
4.85mm
Width
3.9mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.55mm