N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

RS kataloški broj:: 171-3697robna marka: Taiwan SemiconductorProizvođački broj:: TSM2308CX RFG
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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

192 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.99 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

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€ 0,43

komadno (u pakiranju od 50) (bez PDV-a)

€ 0,538

komadno (u pakiranju od 50) (s PDV-om)

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG
Odaberite vrstu pakiranja

€ 0,43

komadno (u pakiranju od 50) (bez PDV-a)

€ 0,538

komadno (u pakiranju od 50) (s PDV-om)

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakiranja

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50 - 200€ 0,43€ 21,50
250+€ 0,42€ 21,00

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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

192 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.99 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C