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Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
800 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
2.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
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Tehnička dokumentacija
Tehnički podaci
Proizvođač
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
800 V
Package Type
TO-251
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
2.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V