Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,35
Each (Supplied on a Reel) (bez PDV-a)
€ 1,688
Each (Supplied on a Reel) (s PDV-om)
5
€ 1,35
Each (Supplied on a Reel) (bez PDV-a)
€ 1,688
Each (Supplied on a Reel) (s PDV-om)
5
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
5 - 20 | € 1,35 | € 6,75 |
25 - 45 | € 1,30 | € 6,50 |
50 - 120 | € 1,22 | € 6,10 |
125 - 245 | € 1,14 | € 5,70 |
250+ | € 1,13 | € 5,65 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu