Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
134 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
€ 15,90
€ 3,18 komadno (u pakiranju od 5) (bez PDV-a)
€ 19,88
€ 3,975 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 15,90
€ 3,18 komadno (u pakiranju od 5) (bez PDV-a)
€ 19,88
€ 3,975 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 20 | € 3,18 | € 15,90 |
| 25 - 45 | € 3,07 | € 15,35 |
| 50 - 120 | € 2,87 | € 14,35 |
| 125 - 245 | € 2,68 | € 13,40 |
| 250+ | € 2,65 | € 13,25 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
134 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.8mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


