N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Provjerite ponovno kasnije.
€ 4,05
komadno (u pakiranju od 2) (bez PDV-a)
€ 5,062
komadno (u pakiranju od 2) (s PDV-om)
2
€ 4,05
komadno (u pakiranju od 2) (bez PDV-a)
€ 5,062
komadno (u pakiranju od 2) (s PDV-om)
2
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
2 - 8 | € 4,05 | € 8,10 |
10 - 18 | € 3,90 | € 7,80 |
20 - 48 | € 3,65 | € 7,30 |
50 - 98 | € 3,45 | € 6,90 |
100+ | € 3,40 | € 6,80 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Detalji o proizvodu