Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Philippines
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,68
komadno (u cijevi od 50) (bez PDV-a)
€ 2,10
komadno (u cijevi od 50) (s PDV-om)
50
€ 1,68
komadno (u cijevi od 50) (bez PDV-a)
€ 2,10
komadno (u cijevi od 50) (s PDV-om)
50
Kupujte na veliko
količina | jedinična cijena | Po cijev |
---|---|---|
50 - 50 | € 1,68 | € 84,00 |
100 - 200 | € 1,54 | € 77,00 |
250 - 450 | € 1,51 | € 75,50 |
500 - 700 | € 1,48 | € 74,00 |
750+ | € 1,44 | € 72,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Philippines
Detalji o proizvodu