Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 6,45
komadno (u cijevi od 50) (bez PDV-a)
€ 8,062
komadno (u cijevi od 50) (s PDV-om)
50
€ 6,45
komadno (u cijevi od 50) (bez PDV-a)
€ 8,062
komadno (u cijevi od 50) (s PDV-om)
50
Kupujte na veliko
količina | jedinična cijena | Po cijev |
---|---|---|
50 - 50 | € 6,45 | € 322,50 |
100 - 200 | € 5,25 | € 262,50 |
250+ | € 5,10 | € 255,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu