Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Detalji o proizvodu
MOSFET Transistors, Toshiba
€ 3,61
€ 3,61 komadno (bez PDV-a)
€ 4,51
€ 4,51 komadno (s PDV-om)
Standard
1
€ 3,61
€ 3,61 komadno (bez PDV-a)
€ 4,51
€ 4,51 komadno (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena |
|---|---|
| 1 - 9 | € 3,61 |
| 10 - 19 | € 3,48 |
| 20 - 49 | € 3,43 |
| 50 - 249 | € 3,16 |
| 250+ | € 3,08 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Detalji o proizvodu


