Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
207 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Detalji o proizvodu
MOSFET Transistors, Toshiba
€ 4,56
€ 4,56 komadno (bez PDV-a)
€ 5,70
€ 5,70 komadno (s PDV-om)
Standard
1
€ 4,56
€ 4,56 komadno (bez PDV-a)
€ 5,70
€ 5,70 komadno (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
1
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena |
|---|---|
| 1 - 24 | € 4,56 |
| 25 - 99 | € 4,37 |
| 100 - 349 | € 4,34 |
| 350 - 499 | € 4,02 |
| 500+ | € 3,90 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
207 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Detalji o proizvodu


